Compound semiconductor nanotube materials grown and fabricated
نویسندگان
چکیده
منابع مشابه
Compound semiconductor nanotube materials grown and fabricated
A new GaAs/InGaAs/InGaP compound semiconductor nanotube material structure was designed and fabricated in this work. A thin, InGaAs-strained material layer was designed in the nanotube structure, which can directionally roll up a strained heterostructure through a normal wet etching process. The compound semiconductor nanotube structure was grown by gas-source molecular beam epitaxy. A good cry...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2011
ISSN: 1556-276X
DOI: 10.1186/1556-276x-6-627